GA20JT12-263 ixabiso leenkcukacha GeneSiC Semiconductor| www.infortune-xh.com

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Icandelo lomvelisi: GA20JT12-263

Umenzi: GeneSiC Semiconductor

Inkcazo: TRANS SJT 1200V 45A D2PAK

Udidi: iimveliso ze-semiconductor ezicacileyo

Usapho: transistors - fets, mosfets - single

Ikhona evenkileni: 14263

Amaxwebhu edatha kwi-Intanethi: GA20JT12-263 PDF

GA20JT12-263Qaphela

I-HK InFortune Electronics Co., Ltd ngumsasazi ozimeleyo wamacandelo e-elektroniki, Sizinikezele ekuboneleleni abathengi ngezinto zombane kunye neenkonzo ezixhasayo. thengisa iimveliso ezintsha kunye nezoqobo kwaye unikeze iwaranti yonyaka omnye kwiimveliso zethu. Thenga i-GA20JT12-263 GeneSiC Semiconductor kwi-in-fortune.com. Sineziqwenga ezi-134 zeGA20JT12-263 kwisitokhwe esikhoyo ngoku. Ngenisa umbuzo nge-GA20JT12-263 okanye uthumele i-imeyile [email protected], siya kuqhagamshelana nawe kwiiyure ze-24.

uthotho:-
ipakethe:Tube
ubume benxalenye:Active
uhlobo lwefet:-
iteknoloji:SiC (Silicon Carbide Junction Transistor)
Ukukhupha amanzi kumthombo wombane (vdss):1200 V
umjelo wamanzi oqhubekayo (id) @ 25°c:45A (Tc)
amandla ombane okuqhuba (ubuninzi bee-rds kwi, min rds on):-
rds kwi (max) @ id, vgs:60mOhm @ 20A
vgs(th) (max) @ id:-

intlawulo yesango (qg) (max) @ vgs:-
vgs (ubuninzi):-
igalelo amandla (ciss) (max) @ vds:3091 pF @ 800 V
fet feature:-
Ukutshatyalaliswa kwamandla (ubuninzi):282W (Tc)
ubushushu bokusebenza:175°C (TJ)
uhlobo lokuxhoma:Surface Mount
iphakheji yesixhobo somthengisi:D2PAK (7-Lead)
iphakheji / ityala:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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