SISS46DN-T1-GE3 ixabiso leenkcukacha Vishay / Siliconix| www.infortune-xh.com

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Icandelo lomvelisi: SISS46DN-T1-GE3

Umenzi: Vishay / Siliconix

Inkcazo: MOSFET N-CH 100V 12.5/45.3A PPAK

Udidi: iimveliso ze-semiconductor ezicacileyo

Usapho: transistors - fets, mosfets - single

Ikhona evenkileni: 13706

Amaxwebhu edatha kwi-Intanethi: -

SISS46DN-T1-GE3Qaphela

I-HK InFortune Electronics Co., Ltd ngumsasazi ozimeleyo wamacandelo e-elektroniki, Sizinikezele ekuboneleleni abathengi ngezinto zombane kunye neenkonzo ezixhasayo. thengisa iimveliso ezintsha kunye nezoqobo kwaye unikeze iwaranti yonyaka omnye kwiimveliso zethu. Thenga i-SISS46DN-T1-GE3 Vishay / Siliconix kwi-in-fortune.com. Sineziqwenga ezi-5832 zeSISS46DN-T1-GE3 kwisitokhwe esikhoyo ngoku. Ngenisa umbuzo nge-SISS46DN-T1-GE3 okanye uthumele i-imeyile [email protected], siya kuqhagamshelana nawe kwiiyure ze-24.

uthotho:TrenchFET® Gen IV
ipakethe:Tape & Reel (TR)Cut Tape (CT)
ubume benxalenye:Active
uhlobo lwefet:N-Channel
iteknoloji:MOSFET (Metal Oxide)
Ukukhupha amanzi kumthombo wombane (vdss):100 V
umjelo wamanzi oqhubekayo (id) @ 25°c:12.5A (Ta), 45.3A (Tc)
amandla ombane okuqhuba (ubuninzi bee-rds kwi, min rds on):7.5V, 10V
rds kwi (max) @ id, vgs:12.8mOhm @ 10A, 10V
vgs(th) (max) @ id:3.4V @ 250µA

intlawulo yesango (qg) (max) @ vgs:42 nC @ 10 V
vgs (ubuninzi):±20V
igalelo amandla (ciss) (max) @ vds:2140 pF @ 50 V
fet feature:-
Ukutshatyalaliswa kwamandla (ubuninzi):5W (Ta), 65.7W (Tc)
ubushushu bokusebenza:-55°C ~ 150°C (TJ)
uhlobo lokuxhoma:Surface Mount
iphakheji yesixhobo somthengisi:PowerPAK® 1212-8S (3.3x3.3)
iphakheji / ityala:PowerPAK® 1212-8S

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